 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTA4151P, NTE4151P Small Signal MOSFET -20 V, -760 mA, Single P-Channel, Gate Zener, SC-75, SC-89 Features http://onsemi.com V(BR)DSS RDS(on) TYP 0.26 W @ -4.5 V -20 V 0.35 W @ -2.5 V 0.49 W @ -1.8 V -760 mA ID MAX * * * * * * * * * Low RDS(on) for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC-75 Standard Gullwing Package ESD Protected Gate Pb-Free Packages are Available Applications High Side Load Switch DC-DC Conversion Small Drive Circuits Battery Operated Systems such as Cell Phones, PDAs, Digital Cameras, etc. P-Channel MOSFET D MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) SC-75 SC-89 Pulsed Drain Current Steady State Symbol VDSS VGS ID PD Steady State tp =10 ms IDM TJ, TSTG IS TL ESD 301 313 1000 -55 to 150 -250 260 1800 mA Value -20 6.0 -760 Units V V mA mW G S MARKING DIAGRAM & PIN ASSIGNMENT 3 2 1 Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) Gate-to-Source ESD Rating - (Human Body Model, Method 3015) C mA C V SC-75 / SOT-416 CASE 463 STYLE 5 3 2 1 3 Drain xx M G G 1 Gate 2 Source THERMAL RESISTANCE RATINGS Junction-to-Ambient - Steady State (Note 1) SC-75 SC-89 RqJA 415 400 C/W SC-89 CASE 463C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). xx M G = Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2006 1 September, 2006 - Rev. 5 Publication Order Number: NTA4151P/D NTA4151P, NTE4151P ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Drain-to-Source On Resistance VGS(TH) RDS(on) VDS = VGS, ID = -250 mA VGS = -4.5 V, ID = -350 mA VGS = -2.5 V, ID = -300 mA VGS = -1.8 V, ID = -150 mA Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = -250 mA -0.72 -1.1 V td(ON) tr td(OFF) tf VGS = -4.5 V, VDD = -10 V, ID = -200 mA, RG = 10 W 8.0 8.2 29 20.4 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = -4.5 V, VDD = -10 V, ID = -0.3 A VGS = 0 V, f = 1.0 MHz, VDS = -5.0 V 156 28 18 2.1 0.125 0.325 0.5 nC pF gFS VDS = -10 V, ID = -250 mA -0.45 0.26 0.35 0.49 0.4 0.36 0.45 1.0 S V W V(BR)DSS IDSS IGSS VGS = 0 V, ID = -250 mA VGS = 0 V, VDS = -16 V VDS = 0 V, VGS = 4.5 V -20 -1.0 $1.0 -100 $10 V nA mA Symbol Test Condition Min Typ Max Unit 2. Pulse Test: pulse width 300 ms, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTA4151PT1 NTA4151PT1G NTE4151PT1G Marking TN TN TM Package SC-75 SC-75 (Pb-Free) SC-89 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTA4151P, NTE4151P TYPICAL ELECTRICAL CHARACTERISTICS 0.7 TJ = 25C -ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS) 0.6 -1.5 V 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1.0 1.5 2.0 -1.0 V 2.5 3.0 VGS = -1.75 V to -4.5 V -1.25 V 0.5 0.4 0.3 0.2 TJ = 125C 0.1 TJ = -55C 0 0 0.4 0.8 1.2 1.6 2.0 TJ = 25C 0.6 VDS w -10 V -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.6 VGS = -4.5 V 0.5 0.4 0.3 0.2 0.1 0 0 TJ = 125C TJ = 25C TJ = -55C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.6 Figure 2. Transfer Characteristics VGS = -2.5 V 0.5 0.4 0.3 0.2 0.1 0 0 TJ = 125C TJ = 25C TJ = -55C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Drain Current and Temperature 1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = - 0.35 A VGS = -4.5 V C, CAPACITANCE (pF) Figure 4. On-Resistance vs. Drain Current and Temperature 250 TJ = 25C 200 CISS 150 1.4 1.2 1.0 100 COSS CRSS 0 4 8 12 16 20 0.8 50 0.6 -50 -25 0 25 50 75 100 125 150 0 TJ, JUNCTION TEMPERATURE (C) DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 NTA4151P, NTE4151P TYPICAL ELECTRICAL CHARACTERISTICS -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 -IS, SOURCE CURRENT (AMPS) QT 4 0.7 VGS = 0 V 0.6 0.5 0.4 0.3 0.2 0.1 TJ = 25C 0 0 0.2 0.4 0.6 0.8 1.0 TJ = 125C 3 QGS QGD 2 1 0 0 0.4 VDS = -10 V ID = -0.3 A TA = 25C 2.0 0.8 1.2 1.6 QG, TOTAL GATE CHARGE (nC) 2.4 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 7. Gate-to-Source Voltage vs. Total Gate Charge Figure 8. Diode Forward Voltage vs. Current r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 Figure 9. Normalized Thermal Response http://onsemi.com 4 NTA4151P, NTE4151P PACKAGE DIMENSIONS SC-75/SOT-416 CASE 463-01 ISSUE F -E- 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 INCHES NOM 0.031 0.002 0.008 0.006 0.063 0.031 0.04 BSC 0.004 0.006 0.061 0.063 MIN 0.027 0.000 0.006 0.004 0.059 0.027 e 1 -D- b 3 PL 0.20 (0.008) M D HE 0.20 (0.008) E DIM A A1 b C D E e L HE MAX 0.035 0.004 0.012 0.010 0.067 0.035 0.008 0.065 C A L A1 STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NTA4151P, NTE4151P SC-89, 3 LEAD CASE 463C-03 ISSUE C A -X- 3 1 2 B -Y- S K G 2 PL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF --- --- 10 _ --- --- 10 _ 1.50 1.60 1.70 INCHES NOM MAX 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 BSC 0.021 REF 0.004 0.006 0.008 0.012 0.016 0.020 0.043 REF --- --- 10 _ --- --- 10 _ 0.059 0.063 0.067 MIN 0.059 0.030 0.024 0.009 D 0.08 (0.003) M 3 PL XY M C N J -T- SEATING PLANE DIM A B C D G H J K L M N S SOLDERING FOOTPRINT* H H L G *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 NTA4151P/D |
Price & Availability of NTA4151P
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |